UTC8050SECB D9D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
700mA/0.7A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
110 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
1W |
| Description & Applications |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC 8550S |
| 描述与应用 |
低电压大电流 小信号NPN 晶体管 *集电极电流高达700mA *集电极 - 发射极电压高达20 V |
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