UPA869TD KJ 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
13V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V |
集电极连续输出电流IC
Collector Current(IC) |
40mA/100mA |
截止频率fT
Transtion Frequency(fT) |
18000MHz/6500MHz |
直流电流增益hFE
DC Current Gain(hFE) |
180/120 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
210mW |
Description & Applications |
Features ? NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINI MOLD (M16, 1208 PACKAGE) ? 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., ?S21e?2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion transistor suited for OSC applications fT = 6.5 GHz TYP., ?S21e?2 = 5.5 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz ? 6-pin lead-less minimold (M16, 1208 package) |
描述与应用 |
特点 ?NPN硅锗射频晶体管(带2个不同的元素)IN6针引线的Mini模具(M16,1208包) ?2个不同的内置晶体管(NESG2046M33,2SC5800) Q1:高增益硅锗晶体管?FT =18 GHz的TYP。?S21E?2= 13 dB典型值。 @ VCE= 1 V,IC= 15 mA时,F =2吉赫 Q2:低相位失真晶体管适合OSC的应用?FT =6.5 GHz的TYP。?S21E?2= 5.5 dB典型值。 @ VCE= 1 V,IC= 15 mA时,F =2吉赫 ?6针引线小型模具(M161208包) |
技术文档PDF下载 |
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