UPA860TD VV 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V/3V |
集电极连续输出电流IC
Collector Current(IC) |
30mA/35mA |
截止频率fT
Transtion Frequency(fT) |
12000MHz/20000MHz |
直流电流增益hFE
DC Current Gain(hFE) |
75~150/50~100 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
210mW |
Description & Applications |
Features ? NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINI MOLD ? Low voltage operation ? 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ?S21e 2= 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 GHz TYP., ?S21e?2 = 13.0 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt ? 6-pin lead-less minimold package |
描述与应用 |
特点 ?NPN硅RF晶体管(带2个不同的元素)于一个6针引线迷你模具 ?低电压工作 ?2个不同的内置晶体管(2SC5435,2SC5786) Q1:高增益晶体管的fT=12.0 GHz的TYP,?S21E,?2 =8.5 dB典型值。 @ VCE= 3 V,IC=10 mA时,F =2吉赫 Q2:低相位失真晶体管适合3 GHz或更高OSC应用 FT =20.0 GHz的TYP。?S21E?2= 13.0 dB典型值。 @ VCE= 1 V,IC=20 mA时,F =2吉赫 NF= 1.4 dB(典型值)。 @ VCE= 1 V,IC=5毫安,F =2 GHz时,ZS= Zopt ?6针引线小型模具包 |
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