UPA846TC 2F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V/9V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V/5.5V |
| 集电极连续输出电流IC
Collector Current(IC) |
35mA/100mA |
| 截止频率fT
Transtion Frequency(fT) |
13500MHz/5500MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60~120/100~145 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
230mW |
| Description & Applications |
Features ?NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINI MOLD ? 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor fT = 13.5 GHz TYP., ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Q2: Built in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., ?S21e?2= 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz ? Flat-lead 6-pin thin-type ultra super mini mold package |
| 描述与应用 |
特点 ?NPN硅RF晶体管（带2个不同的元素）在扁平引线6-PIN薄型超超迷你模具 ?2个不同的内置晶体管（2SC5603，2SC5676） Q1：13.5 GHz的高增益晶体管的FT =13.5 GHz的TYP。?S21E?2= 10.0 dB（典型值）。 @ VCE= 1 V，IC= 5毫安，F =2吉赫 Q2：内置低电压操作，低相位失真晶体管适合OSC操作 FT =5.5 GHz的TYP。?S21E?2= 4.0 dB（典型值）。 @ VCE= 1 V，IC=10 mA时，F =2吉赫 ?扁平引线6针瘦型超超级迷你模具包 |
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