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UPA675T SA 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
16V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
最大漏极电流Id
Drain Current |
100mA/0.1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance |
12?@ VGS = 4V, ID = 10mA |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.5~1.1V |
耗散功率Pd
Power Dissipation |
200mW/0.2W |
Description & Applications |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The μ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES ? Two MOS FET circuits in package the same size as SC-70 ? Automatic mounting supported ? Gate can be driven by a 1.5 V power source ? Because of its high input impedance, there’s no need to consider a drive current ? Since bias resistance can be omitted, the number of components required can be reduced |
描述与应用 |
N沟道MOS场效应晶体管 用于高速开关 说明 μPA675T是一个N沟道垂直MOS FET。因为它 可以由低至1.5 V的电压,这是不 必要考虑驱动电流,这FET是理想的作为 执行器的低电流的便携式系统,如耳机 音响和摄像机。 特点 ?两个MOS FET的软件包电路SC-70相同的尺寸 ?支持自动安装 ?门可以由一个1.5 V电源 ?由于其高输入阻抗,有没有必要考虑驱动电流 自偏压电阻可以省略,数量组件可以减少所需要 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
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