UP0487C0VL 2V 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
4?@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| 耗散功率Pd
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Silicon N-channel MOSFET For switching ■ Features ?High-speed switching ? Incorporating a built-in gate protection-diode ?Two elements incorporated int one package(Each transistor is separated) ?Mini type package, reduction of the mounting area and assembly cost |
| 描述与应用 |
硅N沟道MOSFET 对于开关 ■特点 ?高速开关 ?集成了内置栅极保护二极管 ?两个元素注册成立的第一个包（每个晶体管分离） ?迷你型包装，减少安装面积和装配成本 |
| 技术文档PDF下载 |
在线阅读  |
