UP0411M001MT E4 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
80MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
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| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-250mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
125mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? Silicon PNP epitaxial planar type ? Two elements incorporated into one package (transistors with built-in resistor) ? Reduction of the mounting area and assembly cost by one half. ? For switching/digital circuits |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP硅外延平面型 ?两个要素纳入一个包（内置电阻晶体管） ?减少安装面积和汇编一半的费用。 ?对于开关/数字电路 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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