UNR321000LSO BL 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
160 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
0.1W/100mW |
| Description & Applications |
Silicon NPN epitaxial planar transistor For digital circuits Features ? Optimum for downsizing of the equipment and high-density mounting ?Contribute for low power consumption |
| 描述与应用 |
NPN硅外延平面晶体管 用于数字电路 特性 ?最佳的s缩小设备和高密度安装 ?低功耗贡献 |
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