UN212Y 7Y 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/0.5A |
| 基极输入电阻R1
Input Resistance(R1) |
3.1KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
4.6KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.67 |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Features ?Silicon PNP epitaxial planer transistor ?Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ?Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing |
| 描述与应用 |
特点 ?硅PNP外延刨刀晶体管的 ?成本可降低通过减员设备和减少部件的数量。 ?迷你型包装，使瘦身的设备和通过自动插入磁带包装盒包装 |
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