TPCP8J01 8J01 的参数 |
| FET类型
Type |
MOSFET P-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
-32V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-5.5A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
35m?@ VGS = -10V, ID = -3000mA |
| 跨导
Forward Transfer Admittance |
9.6s@VDS=-10V，Id=-3A |
| IDSS(Vgs=0V) |
|
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
-0.8~-2.0V |
| BJT 类型
Type |
NPN |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 耗散功率Pd
Power Dissipation |
1060mW/1.06W |
| Description & Applications |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type Notebook PC Applications Portable Equipment Applications ? Lead(Pb)-Free ? Small mounting area due to small and thin package ? Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) ? High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) ? Low leakage current: IDSS = ?10 μA (VDS = ?32 V) ? Enhancement-mode: P Channel Vth = ?0.8 to ?2.0 V (VDS = ?10 V, ID = ?1 mA) |
| 描述与应用 |
东芝多芯片器件硅P沟道MOS类型（U-MOSIV）/硅NPN外延型 笔记本电脑应用 便携式设备的应用 ?小安装面积小而薄的包装 ?低漏源导通电阻P沟道的RDS（ON）= 27mΩ（典型值） ?高正向转移导纳：P通道| YFS|= 9.6 S（典型值） ?低漏电流IDSS=-10μA（VDS=-32 V） ?增强模式：P沟道Vth =-0.8到-2.0 V （VDS= -10 V，ID=-1毫安） |
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