TPC8212 TPC8212 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
±20V |
| 最大漏极电流Id
Drain Current |
6A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
16mΩ~21mΩ VGS = 10 V , ID = 3 A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.1V~2.3V VDS = 10 V, ID = 1 mA |
| 耗散功率Pd
Power Dissipation |
0.75W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) .
* High-Efficiency DC/DC Converter Applications
* Notebook PC Applications
* Portable-Equipment Applications
* Small footprint due to small and thin package
* High-speed switching
* Small gate charge: QSW = 5.5 nC (typ.)
* Low drain-source ON-resistance: RDS (ON)= 16 mΩ (typ.)
* High forward transfer admittance: |Yfs| =14 S (typ.)
* Low leakage current: IDSS = 10 ??A (max) (VDS = 30 V)
* Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS型（超高速U-MOSIII），。
*高效率DC/ DC转换器应用
*笔记本电脑应用
*便携式设备应用
*由于占地面积小，小而薄的包装
*高速开关
*小门负责人：QSW= 5.5 NC（典型值）
*低漏源导通电阻RDS（ON）= 16mΩ（典型值）
*较强的正向转移导纳：| YFS|=14 S（典型值）
*低漏电流IDSS= 10μA（最大）（VDS=30 V）
*增强模式：VTH =1.1到2.3 V（VDS=10V，ID= 1 mA时） |
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