SST309 Z9HAB 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
12~30ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-1~-4v |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
?N–Channel JFETs ?Excellent High Frequency Gain:Gps 11.5 dB @ 450 MHz ?Very Low Noise: 2.7 dB @ 450 MHz ?Very Low Distortion ?High ac/dc Switch Off-Isolation |
| 描述与应用 |
?N沟道JFETs ?优秀的高频增益：GPS11.5分贝@450兆赫 ?非常低噪声：2.7分贝@450兆赫 ?非常低的失真 ?高AC / DC开关关断隔离 |
| 技术文档PDF下载 |
在线阅读  |
