SST200 S2R 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
40v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-40v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.15~0.7ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.3~-0.9v |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
?N–Channel JFETs ?Low Cutoff Voltage: <0.9 V ?High Input Impedance ?Very Low Noise |
| 描述与应用 |
?N沟道JFETs ?低截止电压：<0.9 V ?高输入阻抗 ?非常低噪声 |
| 技术文档PDF下载 |
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