SST108 18 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
80ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-3~-10v |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
?N–Channel JFETs ?Low On-Resistance: J108 <8 ?Fast Switching—tON: 4 ns ?Low Leakage: 20 pA ?Low Capacitance: 11 pF ?Low Insertion Loss |
| 描述与应用 |
?N沟道JFETs ?低导通电阻：J108<8 ?快速开关吨：4纳秒 ?低漏电流：20 pA的 ?低电容：11 pF的 ?低插入损耗 |
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