SSM6E01TU KTA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V/20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/10V |
| 最大漏极电流Id
Drain Current |
-10A/50mA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
240m?@ VGS = -2.5V, ID = -500mA /1?@ VGS = 2.5V, ID = 10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.1V/0.7~1.3V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applications P-channel MOSFET and N-channel MOSFET incorporated into one package. Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation |
| 描述与应用 |
TOSHIBA多芯片设备 硅P沟道MOS类型（U-MOS II）+ N沟道MOS类型（平面） 负载开关应用中 P沟道MOSFET和N沟道MOSFET的纳入一包装。 低功耗由于P沟道MOSFET，具有低RDS（ON）和低电压操作 |
| 技术文档PDF下载 |
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