L2SA812SLT1G M7 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
| 集电极连续输出电流IC
Collector Current(IC) |
?150mA/-0.15A |
| 截止频率fT
Transtion Frequency(fT) |
180MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
270~560 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP epitaxial planar transistor General Purpose Transistors FEATURES High Voltage NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements |
| 描述与应用 |
PNP外延平面晶体管 通用晶体管 特点 高电压 NPN补充：L2SC1623 ?我们声明，对产品材料遵守RoHS要求 |
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