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SL12 SL2 的参数 |
| 反向电压Vr
Reverse Voltage |
20V |
| 平均整流电流Io
AVerage Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
445mV/0.445V |
| 最大耗散功率Pd
Power dissipation |
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| Description & Applications |
High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications ?Plastic package has Underwriters Laboratory ?Low profile package ?Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency ?High current capability, low forward voltage drop ?High surge capability |
| 描述与应用 |
高电流表面贴装 PNP硅低VCE（SAT） 电池晶体管 供电应用 ?塑料包装 ?薄型包装 ?金属硅交界处，大部分载波传导 ?低功耗，高效率 ?高电流能力，低正向压降 ?高浪涌能力 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| SL12 |
SL2 |
VISHAY |
05+ |
SMA/DO-214AC |
2360 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
查看 |
| SL13-E3/61T |
SL3 |
VISHAY |
06+ROHS |
SMA/DO-214AC |
1004 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
查看 |
| SL1002 |
SL1002 |
SE CORP |
07+ROHS |
SOT-223 |
43850 |
三极管Bipolar Junction Transistors(BJT)-NPN |
查看 |
| SL1001 |
SL1001 |
SE CORP |
08+ROHS |
SOT-223 |
14900 |
三极管Bipolar Junction Transistors(BJT)-PNP |
查看 |
| SL1TEFR033 |
33M |
KOA |
05+ |
1W-0.033 |
200 |
电阻Resistor-贴片电阻Chip Resistor - Surface Mount |
查看 |
| SL1002 |
SL1002 |
SE CORP |
06+4kNOPB |
SOT-223 |
5000 |
三极管Bipolar Junction Transistors(BJT)-NPN |
查看 |
| SL14 |
SL14 |
WEITRON |
07+ROHS |
SMA/DO-214AC |
600 |
未分类 |
查看 |
| SL13-E3/61T |
SL3 |
VISHAY |
05+rohs |
SMA/DO-214AC |
0 |
二极管Diodes |
查看 |
| SL1001 |
SL1001 |
SE CORP |
08+ROHS |
SOT-223 |
10000 |
三极管Bipolar Junction Transistors(BJT) |
查看 |
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