SI5513DC EB 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/12V |
| 最大漏极电流Id
Drain Current |
3.1A/-2.1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
134m?@ VGS =2.5V, ID =2.3A/260m?@ VGS =-2.5V, ID =-1.7A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.5V/-0.6~-1.5V |
| 耗散功率Pd
Power Dissipation |
1.1W |
| Description & Applications |
Complementary 20-V (D-S) MOSFET |
| 描述与应用 |
互补的 20-V（D-S）的MOSFET |
| 技术文档PDF下载 |
在线阅读  |
