SI1555DL-T1-GE3 RBW 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/8V |
| 最大漏极电流Id
Drain Current |
660mA/-570mA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
630m?@ VGS =2.5V, ID =400mA/1.8?@ VGS =-2.5V, ID =-250mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.4V/-0.45~1V |
| 耗散功率Pd
Power Dissipation |
270mW/0.27W |
| Description & Applications |
Complementary Low-Threshold MOSFET Pair |
| 描述与应用 |
低阈值MOSFET对互补 |
| 技术文档PDF下载 |
在线阅读  |
