RT2N03M-T11-1 N1 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
100mA |
Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
50 |
截止频率fT
Transtion Frequency(fT) |
200MHz |
耗散功率Pc
Power Dissipation |
150mW/0.15W |
Description & Applications |
Features ? COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE ? Built-in bias resistor ( R1=10 KΩ/Ohm , R2=10KΩ/Ohm ) ? Mini package for easy mounting Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
描述与应用 |
特点 ?复合晶体管,电阻开关中的应用硅NPN外延型 ?内置偏置电阻(R1=10千欧,R2=10KΩ/Ohm) ?易于安装的小型封装 应用 ?开关,逆变电路,接口电路和驱动器电路应用 |
技术文档PDF下载 |
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