RN2104FT YD 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
80 |
截止频率fT
Transtion Frequency(fT) |
200MHz |
耗散功率Pc
Power Dissipation |
0.1W/100mW |
Description & Applications |
Features ? Transistor Silicon PNP Epitaxial Type (PCT Process) ? Built-in bias resistors ? Simplified circuit design ? Fewer parts and simplified manufacturing process ? Complementary to RN1101~RN1106 Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
描述与应用 |
特点 ?晶体管的硅PNP外延型(PCT工艺) ?内置偏置电阻 ?简化电路设计更少的部件和简化制造工艺 ?互补RN1101~~ RN1106 应用 ?开关,逆变电路,接口电路和驱动器电路应用 |
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