RN1962FE XXB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) ? Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. ? Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. ? Complementary to RN2961FE to RN2966FE APPLICATIONS ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管）?两个设备都纳入一个极端超迷你（6针）封装。 ?将偏置电阻晶体管，减少了部件数量。减少部件数量，使能制造的更加紧凑的设备，并降低装配成本。 ?互补RN2961FE的到RN2966FE 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
| 技术文档PDF下载 |
在线阅读  |
