RN1441-A KA 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
300mA/0.3A |
| 基极输入电阻R1
Input Resistance(R1) |
5.6KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
200 |
| 截止频率fT
Transtion Frequency(fT) |
30MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Muting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = ?2V, IC = ?4mA) Low on resistance: RON = 1? (typ.) (IB = 5mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process |
| 描述与应用 |
静音和开关应用 高发射基地电压VEBO= 25V（最小值） HFE：高反向扭转HFE=150（典型值）（VCE=2V，IC=4毫安） 低电阻：RON=1Ω（典型值）（IB=5毫安） 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺 |
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