PZT2907A P2F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?60V |
| 集电极连续输出电流IC
Collector Current(IC) |
?600mA/- 0.6A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-400mV/-0.4V |
| 耗散功率Pc
PoWer Dissipation |
1.5W |
| Description & Applications |
PNP Silicon Epitaxial transistor i This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. ? Complement to PZT2222AT1 ? The SOT-223 package can be soldered using wave or reflow |
| 描述与应用 |
PNP硅外延晶体管 这PNP硅外延晶体管线性和开关应用中使用而设计的。该设备是设在SOT-223封装，是专为中等功率表面贴装应用。 ?互补型PZT2222AT1 ?SOT-223封装，可以焊接使用波或回流 |
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