PUMH11 Ht1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
30 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? NPN resistor-equipped transistors; ? Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 10 k? each) ? No mutual interference between the transistors ? Simplification of circuit design ? Reduces number of components and board space APPLICATIONS ? Especially suitable for space reduction in interface and driver circuits ? Inverter circuit configurations without use of external resistors. |
| 描述与应用 |
特点 ?NPN电阻配备晶体管; ?晶体管不同极性和内置的偏置电阻R1和R2（典型值10KΩ/Ohm的） ?晶体管之间没有相互干扰 ?简化电路设计 ?减少元件数量和电路板空间 应用 ?特别适用于空间减少接口和驱动电路 ?逆变器电路配置，而无需使用外部电阻器 |
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