PEMD48 48 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80/100 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? PNP/PNP resistor-equipped transistors; ? 300 mW total power dissipation ? Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package ? Reduces number of components as replacement of two SC-75/SC-89 packaged transistors ? Reduces required board space ? Reduces pick and place costs ? Self alignment during soldering due to straight leads APPLICATIONS ? General purpose switching and amplification ? Inverter and interface circuits ? Circuit driver. |
| 描述与应用 |
特点 ?PNP / PNP电阻配备晶体管; ?300 mW的总功耗 ?非常小1.6毫米×1.2毫米×0.55毫米的超薄封装 ?减少作为两个SC-75/SC-89包装晶体管的更换的部件数量 ?减少所需的电路板空间 ?减少取放成本 ?自对准直引线在焊接过程中，由于 应用 ?通用开关和放大 ?逆变器和接口电路 ?电路驱动。 |
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