PDTC124XE 32 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
0.47 |
直流电流增益hFE
DC Current Gain(hFE) |
80 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
0.15W/150mW |
Description & Applications |
Features Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs |
描述与应用 |
特性 内置偏置电阻 减少了元件数量 简化电路设计 减少取放成本 |
技术文档PDF下载 |
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