NTQD6866R2 866 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
6.9A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
38m?@ VGS =2.5V, ID =2.9A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.2V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
Power MOSFET Features ? New Low Profile TSSOP–8 Package ? Ultra Low RDS(on) ? Higher Efficiency Extending Battery Life ? Logic Level Gate Drive ? Diode Exhibits High Speed, Soft Recovery ? Avalanche Energy Specified ? IDSS and VDS(on) Specified at Elevated Temperatures Applications ? Power Management in Portable and Battery–Powered Products, i.e.:Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones ? Battery Applications ? NoteBook PC |
| 描述与应用 |
功率MOSFET 特点 ?新的薄型TSSOP-8封装 ?超低RDS（开） ?更高的效率延长电池寿命 ?逻辑电平栅极驱动器 ?二极管具有高速软恢复 ?雪崩能量 ?IDSS和VDS（开）指定高温 应用 ?电源管理在便携式和电池供电产品，如：电脑，打印机，PCMCIA卡，蜂窝电话和无绳电话 ?电池的应用 ?笔记本电脑 |
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