NTJD4105CT1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/8V |
| 最大漏极电流Id
Drain Current |
910mA/-1.1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
0.9?@ VGS =1.8V, ID =0.2A/46m?@ VGS =-2.5V, ID =-0.48A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.5V/-0.45~-1V |
| 耗散功率Pd
Power Dissipation |
1.1W |
| Description & Applications |
Small Signal MOSFET Features ? Complementary N and P Channel Device ? ESD Protected Gate ? ESD Rating: Class 1 ? SC?88 Package for Small Footprint (2 x 2 mm) ? Pb?Free Package May be Available. The G?Suffix Denotes a Pb?Free Lead Finish Applications ? DC?DC Conversion ? Load/Power Switching ? Single or Dual Cell Li?Ion Battery Supplied Devices ? Cell Phones, MP3s, Digital Cameras, PDAs |
| 描述与应用 |
小信号MOSFET 特点 ?互补N和P沟道器件 ?ESD保护门 - ESD等级：1级 ?SC-88封装小尺寸（2×2毫米） ?无铅包装可能可用。 G-后缀表示一个Pb-Free无铅封装 应用 ?DC-DC转换 ?负载/功率开关 ?单或双电池锂离子电池提供设备 ?手机，MP3音乐，数码相机，掌上电脑 |
| 技术文档PDF下载 |
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