NTHD5904NT1G D3X 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
3.3A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
105m?@ VGS =2.5V, ID =2.3A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.2V |
| 耗散功率Pd
Power Dissipation |
1.13W |
| Description & Applications |
Power MOSFET Features ? Low RDS(on) and Fast Switching Speed ? Leadless ChipFET Package has 40% Smaller Footprint than TSOP?6. Ideal Device for Applications Where Board Space is at a Premium. ? ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required. ? Pb?Free Packages are Available Applications ? DC?DC Buck or Boost Converters ? Low Side Switching ? Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment |
| 描述与应用 |
功率MOSFET 特点 ?低的RDS（on） ?和快速开关速度 ?无铅ChipFET包装40％更小的体积比TSOP-6。应用电路板空间是一个溢价的理想设备。 ?ChipFET包装具有优良的散热能力。需要传热应用的理想选择。 ?无铅包可用 应用 ?DC-DC降压或升压转换器 ?低边开关 ?优化计算和便携设备的电池和低侧开关中的应用 |
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