NTHC5513T1G C1N 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/12V |
| 最大漏极电流Id
Drain Current |
2.9A/-2.2A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
115m?@ VGS =2.5V, ID =2.3A/240m?@ VGS =-2.5V, ID =-2.7A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.2V/-0.6~-1.2V |
| 耗散功率Pd
Power Dissipation |
1.1W |
| Description & Applications |
Power MOSFET Features ? Complementary N?Channel and P?Channel MOSFET ? Small Size, 40% Smaller than TSOP?6 Package ? Leadless SMD Package Featuring Complementary Pair ? Chip FET Package Provides Great Thermal Characteristics Similar to Larger Packages ? Low RDS(on) in a ChipFET Package for High Efficiency Performance ? Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics ? Pb?Free Package is Available Applications ? Load Switch Applications Requiring Level Shift ? DC?DC Conversion Circuits ? Drive Small Brushless DC Motors ? Designed for Power Management Applications in Portable, Battery Powered Products |
| 描述与应用 |
功率MOSFET 特点 ?互补N-通道和P-通道MOSFET ?小尺寸，40％小于TSOP-6封装 ?无铅SMD封装，拥有互补配对 ?FET封装芯片提供了极大的热特性类似大包 ?低RDS（ON）ChipFET包装在一个高效率的性能 ?薄型（<1.10毫米）允许放置在极薄环境，如便携式电子产品 ?无铅包装是可用 应用 ?负载开关应用的需要电平转换 ?DC-DC转换电路 ?驱动器小型无刷直流电动机 ?专为便携式，电池供电产品的电源管理应用 |
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