茂业电子---NDS355AN的库存详细介绍

型号：	NDS355AN
标记/丝印/代码/打字：	355
厂家：	FAIRCHILD
封装：	SOT-23/SC-59
批号：	05+
库存数量：	0
所属分类：	场效应管FET MOSFET-N沟道MOSFET N-Channel
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NDS355AN 355 的参数
最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	1.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.085Ω/Ohm @1.9A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1-2V
耗散功率Pd Power Dissipation	500mW/0.5W
Description & Applications	N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount
描述与应用	N沟道逻辑电平增强模式场效应晶体管概述这些N沟道逻辑电平增强模式电源场效应晶体管都采用飞兆半导体专有的，高密度，DMOS技术。这高密度工艺特别适合于最大限度地减少通态电阻。这些设备是特别适合于低电压应用在笔记本电脑，手提电话，PCMCIA卡，和其他电池供电电路中快速切换，低线的功率损耗，需要在一个非常小外形表面贴装封装。行业标准外形SOT-23表面贴装封装使用专有SuperSOT 设计卓越的TM-3 热性能和电气性能。高密度电池设计极低的RDS（ON）卓越的导通电阻和最大DC电流能力。紧凑型工业标准SOT-23表面贴装
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