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NDC7002N 02N 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
510mA/0.51A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
4?@ VGS =4.5V, ID =350mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1~2.5V |
| 耗散功率Pd
Power Dissipation |
960mW/0.96W |
| Description & Applications |
Dual N-Channel Enhancement Mode Field Effect Transistor General Description These dual N-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. Features ? High saturation current ? High density cell design for low RDS(ON) ? Proprietary SOT –6 package: design using copper lead frame for superior thermal and electrical capabilities |
| 描述与应用 |
双N沟道增强型场效应晶体管 概述 这些双N沟道增强型场效应晶体管都采用飞兆半导体专有的，高细胞密度，DMOS技术。这非常高密度工艺已旨在最大限度地减少通态电阻，提供坚固可靠的性能和快速切换。在这些设备特别适合于低电压，低电流，开关，电源中的应用。 特点 ?高饱和电流 ?高密度电池设计的低RDS（ON） ?专有SOT-6包装设计采用铜引线框架的卓越热和电气性能 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| NDC7002N |
|
FAIRCHILD |
05+ |
SOT-163/SOT23-6/SSOT-6 |
0 |
场效应管FET-复合场效应管Complex FET-MOSFET 双N沟道MOSFET Dual N-Channel |
查看 |
| NDC7002N |
02N |
FAIRCHILD |
05+ |
SOT-163/SOT23-6/SSOT-6 |
120 |
场效应管FET-复合场效应管Complex FET-MOSFET 双N沟道MOSFET Dual N-Channel |
查看 |
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