MUN5235DWT1g 7m 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
140 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
310mW/0.31W |
| Description & Applications |
Features ?Dual Bias Resistor Transistors ?NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?The SC?70/SOT?323 package can be soldered using wave or reflow.The modified gull?winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ?Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. ?Pb?Free Packages are Available |
| 描述与应用 |
特点 ?双偏置电阻晶体管 ?NPN硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少了元件数量SC-70/SOT-323包装可以使用波或回流焊接。修改后的鸥翅引线过程中吸收热应力除焊接的模具损坏的可能性。 ?可在8 mm压纹带和卷轴。使用设备号到责令7 inch/3000的单位卷轴。 ?无铅包可用 |
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