MRF9511LT1 11H 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
9Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
75~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
322mW/0.322W |
| Description & Applications |
? The RF Line NPN Silicon Low Noise High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 18 Finger, 1.25 Micron Geometry with Gold Top Metal ? Gold Sintered Back Metal ? Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 |
?RF线NPN硅高频低噪声晶体管 设计用于在高增益，低噪声小信号放大器。该系列产品 具有良好的宽带线性，并提供多种封装。 ?完全植入基极和发射极结构 ?18个手指，1.25微米几何与黄金顶部的金属 ?黄金背面金属烧结 ?可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |
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