MRF949BT1 TB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
9Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
? The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. ? Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA ? High Current Gain–Bandwidth Product, f t = 9 GHz @ 15 mA ? Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA ? Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA ? Fully Ion–Implanted with Gold Metallization and Nitride Passivation ? Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel |
| 描述与应用 |
?该RF线NPN硅低噪声晶体管 摩托罗拉的MRF949是一个高性能的NPN晶体管设计用于 高增益，低噪声小信号放大器。 MRF949非常适合低 电压的无线应用。该器件具有9 GHz的直流电流 增益带宽产品具有优异的线性度。 ?低噪声系数，的NFmin1.4分贝（典型值）@ 1 GHz的@5毫安 ?高电流增益带宽积，F 吨 ?=9 GHz的15毫安 ?最大稳定增益= 18分贝@1 GHz的@5毫安 ?输出三阶截，OIP3=+29 dBm的@ 1 GHz的@ 10毫安 ?全镀金氮化硅钝化离子注入 ?可在磁带和卷轴包装选项： T1后缀= 3,000单位每卷 |
| 技术文档PDF下载 |
在线阅读  |
