MRF9331LT1 05V 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
8V |
| 集电极连续输出电流IC
Collector Current(IC) |
2mA |
| 截止频率fT
Transtion Frequency(fT) |
5GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
30~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
50mW |
| Description & Applications |
? The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical. ? Low Power Consumption Characterized for IE = 0.1 to 1.0 mA ? High Current–Gain — Bandwidth Product — fT = 5.0 GHz (Typ) @ IC = 1.0 mAdc ? Low Noise Figure and High Power Gain @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) GNF(matched) = 12.5 dB (Typ) ? Guaranteed RF Parameters ? Surface Mounted SOT–143 Offers Improved RF Performance Lower Package Parasitics High Gain ? Available in tape and reel packaging: T1 suffix = 3,000 units per reel |
| 描述与应用 |
?RF线NPN硅高频晶体管 设计主要用于到1.0 GHz的低功耗放大器。非常适于 传呼机和其他低功耗电池供电系统 关键的。 ?低功耗的特点IE=0.1?1.0毫安 ?高电流增益 - 带宽积 - FT= 5.0千兆赫（典型值）@ IC=1.0 MADC ?低噪声指数和高功率增益@ F =1.0 GHz的 - NF（匹配）=2.5分贝（典型值） GNF（匹配）=12.5分贝（典型值） ?保证的射频参数 ?表面贴装SOT-143提供了改进的RF性能 较低的封装寄生效应 高增益 ?可在磁带和卷轴包装： T1后缀=3000单位每卷 |
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