| MMBTA14 1N 的参数 | 
	
	
	
		| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V | 
	
		| 集电极-发射极反向击穿电压V(BR)CEO
Collector-EmitterVoltage(VCEO) | 30V | 
	
		| 集电极连续输出电流IC
Collector Current(IC) | 1.2A | 
	
		| 截止频率fT
Transtion Frequency(fT) | 125MHz | 
	
		| 直流电流增益hFE
DC Current Gain(hFE) | 20000 @ 5V,0.1A | 
	
		| 管压降VCE(sat)
Collector-Emitter SaturationVoltage | 1.5V | 
	
		| 耗散功率Pc
Power Dissipation | 350mW/0.35W | 
	
		| Description & Applications | ? This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. | 
	
		| 描述与应用 | ?为需要集电流增益可达到1A而设计 | 
	
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