MMBFJ309 GU 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
12~30ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-1~-4v |
| 耗散功率Pd
Power Dissipation |
225mW/0.225W |
| Description & Applications |
N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. |
| 描述与应用 |
N沟道射频放大器 该设备是专为VHF/ UHF放大器，振荡器和混频器 的应用程序。共栅极放大器，16分贝在100 MHz和 12 dB，在450兆赫频率可以实现的。 |
| 技术文档PDF下载 |
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