MMBF170LT1 6Z 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
500mA/0.5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.05Ω/Ohm @200mA,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.8-3.0V |
| 耗散功率Pd
Power Dissipation |
225mW/0.225W |
| Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ?AEC Q101 Qualified ? MVBF170LT1 ?These Devices are Pb?Free and are RoHS Compliant |
| 描述与应用 |
功率MOSFET 500毫安，60 V N沟道SOT-23 AEC Q101标准 - MVBF170LT1 ?这些器件是无铅，符合RoHS标准 |
| 技术文档PDF下载 |
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