MJD112T4 MJD112 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
100V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
100V |
| 集电极连续输出电流IC
Collector Current(IC) |
2A |
| 截止频率fT
Transtion Frequency(fT) |
25MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
500~2000 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
2V~3V |
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
Complementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode |
| 描述与应用 |
Complementary power Darlington transistors HFE线性度好 ■高FT ?频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管 |
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