茂业电子---MC74VHC157DTR2的库存详细介绍

型号：	MC74VHC157DTR2
标记/丝印/代码/打字：	VHC157
厂家：	ON
封装：	TSSOP-16
批号：	05+
库存数量：	130
所属分类：	集成电路ICIntegrated Circuit（IC）逻辑电路Logic circuit 解码器、多路复用器、信号开关Signal Switch, Multiplexer, Decoder
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MC74VHC157DTR2 VHC157 的参数
类型 Type	多路复用器 Multiplexer
电路 Circuit	4 x 2:1
独立电路 Independent Circuits	1
输出高，低电流 Current - Output High, Low	8mA，8mA
单电源 Voltage Supply Source	单电源 Single Supply
电源电压 Voltage - Supply	2 V ~ 5.5 V
Description & Applications	The MC74VHC157 is an advanced high--speed CMOS quad 2--channel multiplexer, fabricated with silicon gate CMOS technology. It achieves high--speed operation similar to equivalent Bipolar--Schottky TTL, while maintaining CMOS low--power dissipation. It consists of four 2--input digital multiplexers with common select (S) and enable (E) inputs. When E is held High, selection of data is inhibited and all the outputs go Low.The select decoding determines whether the A or B inputs get routed to the corresponding Y outputs.The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. High Speed: tPD = 4.1 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 82 FETs
描述与应用	MC74VHC157是一种先进的 - 高速CMOS四-2 通道多路复用器，用硅栅CMOS技术制造。它实现了类似于等效双极-肖特基TTL的高速运转，同时保持CMOS低-功耗。它由四个有着共同选择（S）和使能（E）输入的2-输入数字多路复用器组成。当E保持高，数据选择被禁止，所有输出变低。选择解码决定是否将A或B输入路由到相应的Y输出。内部电路由三个阶段组成，包括一个缓冲区输出，提供高抗干扰性和稳定的输出。耐输入电压高达7 V，3 V系统允许5 V系统的接口。高速：TPD= 4.1 ns（典型值），VCC= 5 V 低功耗：ICC= 4 mA（最大），在TA= 25°C时高抗干扰：VNIH= VNIL=28％VCC 断电保护的输入端平衡传输延时设计用于2 V至5.5 V工作范围低噪声：VOLP= 0.8 V（最大值）引脚和功能兼容与其他标准逻辑系列闭锁性能超过300毫安 ESD性能：HBM>2000 V机型号>200 V 芯片的复杂性：82场效应管
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