LDTD123ELT1G F22 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
|
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
|
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
2.2KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
39 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. |
| 描述与应用 |
特性 1）内置启用偏置电阻器的逆变器电路没有连接外部输入电阻配置 2）偏置电阻组成的薄膜电阻完全隔离，允许负偏置输入。他们也有优势，几乎完全消除了寄生效应。 3）只有开/关条件需要设置操作，使装置的设计容易。 |
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