LDTB114ELT1 f14 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/0.5A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.3W/300mW |
| Description & Applications |
FEATURES ?Digital transistors ?Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). ?The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. ?Only the on/off conditions need to be set for operation, making device design easy. |
| 描述与应用 |
特点 ?数字晶体管 ?内置启用偏置电阻器的配置逆变电路没有连接外部输入电阻（见等效电路）。 ?偏置电阻组成的完全隔离THINFILM电阻允许负偏置输入。他们也有优势，几乎完全消除了寄生效应。 ?只有开/关条件需要设置操作，使装置设计容易。 |
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