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 三极管Bipolar Junction Transistors(BJT (2)
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L4501DW1T1G
 型号:  L4501DW1T1G
 标记/丝印/代码/打字:  5H
 厂家:  LRC
 封装:  SOT-363/SC-88
 批号:  07NOPB
 库存数量:  3000
 所属分类:  三极管Bipolar Junction Transistors(BJT)
  复合三极管Complex Bipolar Transistor
    NPN+NPN
 技术文档PDF:  在线阅读
   
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L4501DW1T1G 5H 的参数

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 150mA
截止频率fT Transtion Frequency(fT) 180MHz
直流电流增益hFE DC Current Gain(hFE) 120~560
管压降VCE(sat) Collector-Emitter Saturation Voltage
耗散功率Pc Power Dissipation 380mW
Description & Applications Features ? Silicon NPN Epitaxial Planer Transistor ? Pb-Free Package is available.
描述与应用 特点 ?硅NPN外延刨床晶体管 ?无铅封装。
技术文档PDF下载 在线阅读

 

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