KTA711E-Y E4 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
80MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
120~400 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-100mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
200mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ?EPITAXIAL PLANAR PNP TRANSISTOR ?A super-minimold package houses 2 transistor. ?Excellent temperature response between these 2 transistor. ?High pairing property in hFE. ?The follwing characteristics are common for Q1, Q2 ?GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?外延平面PNP晶体管 ?超小型模具包设有2个晶体管。 ?优秀的温度响应之间这2个晶体管。 ?高配对财产HFE。 ?在以下的特性是共同为Q1，Q2 ?通用应用。开关中的应用。 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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