KSK595HMTF 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.15~0.35ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.6~-1.5v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?Silicon N-Channel Junction FET ?Especially Suited for use in Audio, Telephone Capacitor Microphones ? Excellent Voltage Characteristic ? Excellent Transient Characteristic |
| 描述与应用 |
?硅N沟道结型场效应管的FM调谐器 ?特别适合用于音频，电话电容话筒 ?优秀的电压特性 ?出色的瞬态特性 |
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