KN4F3M P7 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
2.2KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
8~50 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
FEATURES ?SILICON TRANSISTOR ?RESISTOR BUILT-IN TYPE PNP TRANSISTOR ?Compact package ?Resistors built-in type ?Complementary to KA4xxx |
| 描述与应用 |
特点 ?硅晶体管 ?电阻器内置型PNP晶体管 ?紧凑的封装 ?内置式电阻器 ?互补KA4xxx的 |
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