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IRF6678TR1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
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| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
2.7A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.16Ω/Ohm @1.9A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2.0-4.0V |
| 耗散功率Pd
Power Dissipation |
2.1W |
| Description & Applications |
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. DirectFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated |
| 描述与应用 |
说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 SOT-223封装是专为表面安装 使用气相，红外或波峰焊技术。 其独特的包装设计，可以轻松自动 挑选和地方与其他SOT或SOIC封装，但 提高热过往的表现有额外的好处 由于散热放大“选项卡。的功耗 大于1.25 W是可能在一个典型的表面贴装应用。 DirectFET功率MOSFET 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| IRF6607TR1 |
|
IR |
05+ |
MT |
1000 |
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IR |
05+ |
MT |
4400 |
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| IRF6618TR1 |
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IR |
05+ |
MT |
1000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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| IRF6619TR1 |
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IR |
05+ |
MT |
1000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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| IRF6620TR1 |
|
IR |
05+ |
MT |
2900 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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| IRF6637 |
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IR |
06+ |
MP |
2900 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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| IRF6678TR1 |
|
IR |
05+ |
MT |
1000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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