IMT1A T1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
140MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
120~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-500mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ?General Purpose Transistor (Isolated Dual Transistors) ?Two 2SA1037AK chips in a EMT or UMT or SMT package. ?Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. ?Transistor elements are independent, eliminating interference. |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?通用晶体管（隔离双晶体管） ?两个2SA1037AK芯片在EMT或UMT或SMT封装。 ?安装可能与EMT3或UMT3或SMT3自动安装机器。 ?晶体管元素是独立的，消除干扰 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
|
| 描述与应用 |
|
| 技术文档PDF下载 |
在线阅读  |
